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We propose Multi Gate Oxide — Dual Work-Function (MGO-DWF)-MOSFET which is suitable for low power AB-class RF power amplifier (RF PA). This was examined for the first time by comparing with a standard Cascode connection circuitry composed of LV- and HV- MOSFETs. Dramatically improved FMAX (150 GHz) with sufficient drain break-down voltage (VBD) was experimentally confirmed in a practical device structure...
We studied a backside timing analysis technique utilizing Time Resolved Imaging Emission Microscopy (TRIEM) which can acquire emission data locations and timing simultaneously from an activated LSI chip. In this paper, we will present two case studies of actual failed chips. One is a delay fault case, and the other is a current fault case. Then, we will propose an analysis flow applying TRIEM based...
This paper describes a DC-DC converter which offer the efficiency of 98% for the 800 W fuel-cell system (FC). The authors are currently developing the power conditioner for the FC system the efficiency of which is higher than 95%. To get the efficiency, the efficiency of the DC-DC converter has to exceed 97%. To reduce switching losses, the proposed DC-DC converter consists of three identical conversion...
The effect of strain on both electronic and structural characteristics of HfO2 used for sub-50-nm semiconductor devices was analyzed by a quantum chemical molecular dynamics analysis. The band structure of HfO2 is strongly affected by strain in the film. Based on the change rate of band gap obtained from our simulations, the strain sensitivity of the relative permittivity of HfO2 film is predicted...
In this study, the degradation mechanism of the interface integrity between a hafnium dioxide thin film and a gate electrode thin film was investigated by using quantum chemical molecular dynamics. Effect of point defects such as excessive oxygen and carbon interstitials in the hafnium dioxide films on the formation of the interfacial layer between them was analyzed quantitatively. Though the defect-induced...
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