The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Capacitive Coupled Transmission Line Pulsing (CC-TLP) has successfully identified a known CDM weakness at the RF inputs of two different 90 nm CMOS RF products. The presented study compares electrical and physical failure signatures for packaged devices and even for devices stressed at wafer level. The peak stress currents resulting in a failure as well as the failure signatures correlate very well...
In order to investigate the behavior for very high current densities of polymer resistors on flexible substrates, a pulsed measurement technique was applied. The analytical test technique of Transmission Line Pulsing (TLP) allows, on the basis of square pulses, the in-situ monitoring of the voltages and currents at the Device Under Test (DUT) during pulsing and helps to gain fundamental insights into...
One of the most important issues of resistors properties is the value stability under different electrical and non electrical influences. Mechanical and/or thermal stress together with the electrical one represents the main factors that have a major contribution in resistor value stability. With shrinking resistor geometries of discrete, integrated and integral passives, the electrical stress gains...
Charged device model pulses may be less than 1 ns wide with peak currents exceeding 10 A. They are a true challenge for the ESD protection of advanced technologies with shrinking safety margins. This paper surveys the characterization with very fast rising single shot TLP pulses and the CDM-like stress, if the square pulse is injected into an integrated circuit via a single pin. Complementing the...
Very-fast high-current pulses that occur during charged device model (CDM) ESD events lead to transient voltage overshoots in forward- and reverse-biased pn-junctions, called forward recovery and dynamic reverse overshoot. To improve the device modeling for CDM circuit simulation of integrated circuits, these effects should be fully understood and should be implemented in the device models. In this...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.