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Undoped and N-doped β-Ga2O3 nanowires (NWs), using NH3 as the dopant source, were successfully fabricated by the CVD method on Si substrates. The microstructure, morphology, element composition and carrier concentration of the samples were characterized by XRD, SEM, TEM, and EDX. The results revealed that well-aligned undoped NWs were perpendicular to the substrates. Comparing with undoped β-Ga2O...
An effective, low cost and catalyst-free solution-phase approach was demonstrated for achieving a tailored length and controlled surface-to-volume ratio of aligned ZnO nanowire (NW) arrays. By a slight variation of the solution concentration and growth time, significant changes in length and surface-to-volume ratio of the obtained ZnO NW arrays have been controlled, respectively. The morphology and...
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