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The present work consists of a short review of TiO2-based transparent oxide semiconducting thin films and their possible application in transparent electronics (TE). Preparation of transparent electronics devices and materials, especially of both electron and hole type of electrical conductivity still is a big challenge for researches. Research works conducted in the past few years have shown that...
Measurements of the admittance of Ag/TiW–(Ti–V–Pd) oxide–Si structure as a function of frequency at fixed measurement conditions (i.e. gate voltages, temperature, humidity and light illumination) have been performed and a large dispersion in the measurement results has been observed. The analysis of experimental spectra on the basis of electrical equivalent circuit model, consisting of resistors,...
The fundamental structural, electrical and optical properties of junction-based devices composed of semiconducting thin films of metal oxide on a semiconductor were examined. Thin films were deposited on silicon and silica substrates by hot target reactive magnetron sputtering process. During the deposition base TiO2 films were doped with Co, Pd transition metals. Electrical and optical beam induced...
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