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This paper presents a wideband and high power-handling single-pole four-throw (SP4T) switch IC using InGaAs/InP composite-channel (CC) HEMTs. Owing to the CC structure with an InAlP barrier, the input power for P1dB of 19.4 dBm is 6 dB higher than that of our conventional InGaAs single-channel HEMT switch, with identical wideband performance of ~40 GHz.
A high-speed selector module has been developed. It is constructed from a selector IC mounted in a ceramic package, a power supply unit, phase shifters, and coaxial cables. The IC was designed using LSCFL and fabricated with 0.2 mu m gate length GaAs MESFETs. The selector module operated above 25 Gbit/s. It is expected to be applied to high-speed IC measurements.<<ETX>>
A 20 Gbit/s two-bit multiplexer (MUX) IC has been developed using 0.2 mu m-gate-length MESFETs with a cutoff frequency of 50 GHz. This operating speed is about 70% faster than reported two-bit MUXs using MESFETs of a similar cutoff frequency. The IC was realised with a novel static T-type flip-flop circuit (T-F/F). The T-F/F showed stable operation up to 20 GHz, about 30% faster than a conventional...
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