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This paper describes about newly developed 1700V/400A hybrid module which consists of Si-IGBT and SiC-SBD. The static and dynamic characteristics were evaluated and the turn-on loss is 38% lower and the reverse recovery loss is 83% lower than the conventional all-Si IGBT module because of the reverse recovery current of SiC-SBD is very small to be an unipolar device. The radiation noise on hybrid...
The 1700V/400A hybrid module is consisted of Si-IGBTs and SiC-SBDs mounted in a general 2in1 package. Because the reverse recovery current of SiC-SBD is very small to be an unipolar device, reverse recovery and turn-on losses at 400A on the hybrid module are 83% and 38% lower than that of the conventional all Si module, respectively. Therefore there is a further advantage of hybrid module at high...
The 1700V/400A hybrid module is consisted of Si-IGBTs and SiC-SBDs mounted in a general 2in1 package. Because the reverse recovery current of SiC-SBD is very small to be an unipolar device, reverse recovery and turn-on losses at 400A on the hybrid module are 83% and 38% lower than that of the conventional all Si module, respectively. Therefore there is a further advantage of hybrid module at high...
The reliability of IGBT chip surface electrode for bonding-wires is described. The power cycling (P/C) capability of an IGBT module is improved due to a suppression of chip surface aluminum (Al) electrode degradation with Nickel (Ni) plating. The P/C capability obtained with the Ni plating electrode is about 3 times higher than that with the Al electrode at a high temperature condition. Such a good...
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