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On-state collector-emitter voltage (VCE) is a good indicator to determine the wear-out condition of power device modules. Further, it is a one of the Temperature Sensitive Electrical Parameters (TSEPs) and thus can be used for junction temperature estimation. In this paper, the junction temperature estimation method using on-state VCE for an advanced active power cycling test is proposed. The concept...
The Internet of Things (IoT) is a rapidly emerging application space, poised to become the largest electronics market for the semiconductor industry. IoT devices are focused on sensing and actuating of our physical environment and have a nearly unlimited breadth of uses. In this paper, we explore the IoT application space and then identify two common challenges that exist across this space: ultra-low...
Besides the stress around Cu TSV's, also the stress induced by microbumps is a main contributor to transistor level stress. For complete and successful deployment of 3D IC all effects generating stress have to be addressed. Therefore, this work quantifies the stress and its effects associated with Cu microbumps and their interaction with underfill material in 3D stacks by using a combined experimental...
As scaling becomes increasingly difficult, 3D integration has emerged as a viable alternative to achieve the requisite bandwidth and power efficiency challenges. However mechanical stress induced by the through silicon vias (TSV) is one of the key constraints in the 3D flow that must be controlled in order to preserve the integrity of front end devices. For the first time an extended and comprehensive...
Electron temperature profile of the first plasma on KSTAR has been estimated by the measurement of electron cyclotron emission employing a heterodyne radiometer. The Hot-Cold method was used for absolute calibration.
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