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We report on a top-emitting organic light-emitting device (TE-OLED) using a thermally evaporated and semi-transparent NiO film as a top-electrode. Our TE-OLED was fabricated, basically taking the reverse sequence for the fabrication of a conventional bottom-emitting organic light-emitting device (BE-OLED). Since the resultant sheet resistance of our NiO was high (8kΩ/□) and its transmittance was only...
We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (100) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm −3 according to Hall measurements. Current–voltage (I–V) characteristics of our photodiode were measured in the dark and under...
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