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In this paper, an effective and efficient methodology for reliability simulation is developed to bridge the gap between device-level reliability and that at product level. For the first time, reliability and circuit-failure behaviors under analog and mixed-signal operating conditions are simulated and analyzed with a high-speed Flash analog-to-digital converter (ADC) circuit developed in advanced...
NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution...
In this paper, we study temperature and voltage acceleration of semiconductor device with multiple intrinsic failure mechanisms involved: hot carrier injection (HCI), time dependent dielectric breakdown (TDDB) and negative bias temperature instability (NBTI). Simulation shows that system activation energy and voltage acceleration parameter depend on stress temperature and voltage. A modified Arrhenius...
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