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During the past ten years, fan-in wafer-level chip scale packages (WLCSPs) have extended its application into most of the portable handheld electronic devices, such as smart phones and tablets. All the applications of fan-in WLCSP were limited to devices with smaller die size and lower pin counts. Recently, some new applications with advanced silicon technology nodes impose new challenges on fan-in...
In this study, commercial 512 Mb Double Data Rate Synchronous Dynamic Random Access Memory (DDR SDRAM) modules from three progressive technologies - 130 nm, 110 nm and 90 nm - were selected for experimentation to investigate degradation trends as a function of scaling. High temperature, high voltage accelerated stress testing was performed to characterize DRAM reliability and failure rates. Retention...
FaRBS (Failure Rate Based Simulation Program with Integrated Circuit Emphasis) is a new physics-of-failure based Very Large Scale Integration (VLSI) circuit reliability prediction method. With multiple failure mechanisms inh erently modeled and analyzed, FaRBS will make reliability engineers' life much easier by directly revealing each stress's acceleration effect at system level, thus helping reliability...
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