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The integration density of state-of-the-art electronic systems is limited by the reliability of the manufactured integrated circuits at a desired circuit density. Design rules, operating voltages, frequencies, and temperatures are precisely chosen to ensure correct product functional operation over its intended lifetime. Thus, in order to obtain the overall performance and functionality bounded by...
For ultrathin gate oxide, soft breakdown (SBD) has been extensively studied but not fully integrated into circuit reliability simulation. Using a 6T SRAM cell as a generic circuit example, the time-dependent SBD was incorporated into circuit degradation analysis based on the exponential defect current growth model [1]. SRAM cell stability degradation due to individual failure mechanism was characterized...
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