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A model for the post-breakdown leakage current in MOS p-silicon devices with ultra thin oxides is presented. The model is based on a combination of two ideal diodes and two resistances. Model parameters are extracted using nonlinear optimization
This paper deals with the extraction of parameters and simulation of the postbreakdown leakage current in pMOS devices with ultrathin oxides. The model considered is based on the generalized diode equation, i.e., a diode-like equation with series resistance. The current-voltage (I-V) characteristic can be expressed in a closed-form expression, which makes it is suitable for circuit simulation environments...
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