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Temperature dependent measurements have been used to examine transport mechanisms and energy band structure in MOS devices. In this study, a comparison between high-k HfO2 dielectrics and conventional SiO2 dielectrics is made to investigate dielectric specific thermally activated mechanisms. Temperature dependent measurements on large area n/pMOSFETs composed of SiO2 and HfO2/SiO2 gate dielectrics...
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