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In this paper, a study of the effects on both lifetime and resistivity, induced by helium implantation processes, is presented. A wide range of implantation energies (from 3.5 MeV to 5.8 MeV) and doses (from 1middot108 atm/cm2 to 2middot1011 atm/cm2) is considered and, for each of them, the resistivity profile and the lifetime profile are measured and compared with that of the unprocessed material...
In this work we present an experimental study on the effects of helium implantation in silicon. Doses in the range 1 times 1010 - 5 times 1011 atoms/cm2 have been analysed. Results show that, increasing the dose, a saturation effect on the minimum lifetime that can be achieved occurs, while a marked effect on the resistivity of the material appears. The temperature dependence of the resistivity show...
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