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A previously reported normally-off GaN double-channel (DC-) MOS-HEMT with a gate recess into the upper channel layer has achieved a remarkably low ${R}_{\text {on}}$ . In this letter, we found that the double-channel structure itself does not guarantee a low ${R}_{\text {on}}$ without careful consideration of the electrical coupling between the two channels. A strong channel-to-channel (C2C) coupling...
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