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A novel electrochemical conducting bridge structure with an ion buffer layer and a model of the reset transient behavior are proposed. The addition of the ion-buffer layer to the device retards the Cu-atom diffusing toward the Cu-ion supply layer, thus greatly increases the stability and produces excellent electrical properties. An analytical model is proposed to help understand the entire reset process...
A novel solid-electrolyte based electrochemical induced conductive bridge (CB) resistive memory (ReRAM) is fabricated and characterized. The new device consists of a Cu-doped GeSbTe ion source, a SiO2 memory layer, and a TiTe ion buffer layer. The ion-buffer layer separates the Cu conducting path from the Cu-ion supply layer thus greatly increases the stability. This tri-layer device greatly improves...
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