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We present a compact, 3-stage millimeter-wave monolithic integrated circuit (MMIC) amplifier with an operating frequency of 140–165 GHz, formed by common-emitter configured 0.5 um InP DHBTs and a multilayer thin-film microstrip (TFM) wiring environment. The amplifier small signal gain exhibits >5 dB from 140 GHz–165 GHz. The peak gain is 11 dB at 140 GHz. This is the first time reported InP DHBT...
An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency ft=350GHz and a maximum oscillation frequency fmax=532GHz which is to our knowledge the highest BVCEO ever reported for InGaAs/InP DHBTs in China. The breakdown...
A common base four-finger InGaAs/InP DHBT with 535 GHz fmax using 0.5μm emitter technology is fabricated. Multi-finger design was used to increase input current. Common base configuration was compared with common emitter configuration, and demonstrated a smaller K factor at high frequency span, indicating a larger MSG/MAG breakpoint frequency and thus a higher gain when frequency reaches MAG region...
To resolve problems that the metrological department is short for test equipments of high-voltage switch characteristic tester at present, the calibration technique is relatively backward, and its measuring precision is comparatively low, this paper uses the advanced technologies such as Micro-processor and integrated circuit to check for the time parameter of the high-voltage switch characteristic...
In this paper, a wearable exoskeleton leg conceived and designed to augment human's walking ability is proposed. The ultimate goal of this project is to provide an insight into the methodology of designing and controlling a power assist system, which integrates human's intellect as the central control system for manipulating the wearable anthropomorphic device. The whole process of design, construction...
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