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To establish the reliability model of the high-k gate dielectrics in the EOT-scaled regime, the gradual increase of the leakage current during the stress time, which makes the precise detection of the breakdown harder, has been studied. It has been clarified that multiple occurrence of soft breakdown (SBD) at plural local spots is the cause of the gradual increase, along with a large initial leakage...
There are a number of challenges against an actual employment of high-k films in the production, but ultra-thin SiON films cannot survive for low power application anymore. On the other hand, any new materials introduced into ULSI fabrication processes are required to be used for a couple of device generations, so the material selection should be carefully made. We have investigated HfAlON film as...
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