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This paper describes the techniques to design a SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design methodology of a balanced four-stage common emitter circuit topology was reported. The power amplifier was fully integrated including matching elements and bias circuit. The matching networks use coplanar waveguide (CPW) lines and MIM capacitors. Design considerations including...
This paper presents a 60 GHz 65 nm CMOS RMS power detector to be used in a Power Amplifier regulation loop. The presented test-chip integrates also a differential capacitive coupler sensing the RF voltage on a differential transmission line. The circuit shows 25 dB of linear detection range at 60 GHz, well enough to cover a VSWR of up to 7:1 caused by antenna impedance mismatch while still having...
This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110 GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are...
This paper presents the performance of a wideband 0.13 mum BiCMOS SiGe power amplifier (PA) for millimeter wave (mmW) applications. The design and the measured results of a monolithic integrated low-voltage PA are reported. A balanced four-stage common emitter circuit topology was used to achieve greater than 17 dB of power gain from 59 GHz to 71 GHz. As a result, the amplifier delivers 18 dBm of...
A 65 nm CMOS, 60 GHz fully integrated power amplifier (PA) from STMicroelectronics has been designed for low cost Wireless Personal Area Network (WPAN). It has been optimized to deliver the maximum linear output power (OCP1) without using parallel amplification topology. The simulated OCP1 is equal to 8.9 dBm with a gain of 8 dB. To obtain good performances and consume an ultra compact area of silicon,...
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