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High power diode lasers with low modal gain (∼4 cm−1), predicted to operate with very low filamentation, are shown to operate with near-field modulation depth half that of reference devices (∼12 cm−1). However, beam quality is unaffected.
Optical pulses in the nanosecond and picosecond ranges can be generated by gain switching, Q-switching and mode-locking of diode lasers, either as stand-alone devices or in MOPA systems combining master oscillators (MOs) and power amplifiers (PAs). A review of recent progress achieved at FBH is presented. With a gain switched ridge waveguide (RW) laser optical pulses with a width of 1 ns and more...
In this paper, we present a new concept for an ultra fast pulse picker, consisting of a tapered diode amplifier and a high-speed high-current transistor switch. The transistor switch is realized using a GaN high-electron mobility transistor (HEMT), which offers low parasitic capacitances und high current capabilities together with high switching speed. Moreover, the SiC transistor substrate gives...
High brightness tapered lasers emitting around 650 nm were developed. We realized 2-mm-long devices with 750-mum straight section, 1250-mum tapered section, and 4deg taper angle. The input currents into both sections were independently controlled. The laser reached 500-mW output power in continuous-wave operation in a nearly diffraction-limited beam quality. A modulation efficiency of 7.5 W/A was...
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