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In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III–V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated...
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