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We discuss the effect of annealing on the interfacial structure of Fe/GaAs films, with 2 ?? 4 surface reconstructions, and the subsequent effect on the Schottky barrier height. Images of the interfaces indicate that the annealing process can greatly reduce the level of atomic mixing. A study of the I-V characteristics of Fe/GaAs Schottky barrier diodes, in a wide temperature range of 10-300 K, reveals...
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