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We fabricated black silicon solar cells with conversion efficiency of 16.8% on p-type single crystal Si wafers with a conventional diffused emitter and Al back-surface field (BSF). We replaced the anti-reflection coating step with a single 3-minute `black-silicon' etch of the bare wafer before processing. The nanoporous black-silicon layer, about 300-nm thick is produced in a 3-minute single-step...
Improvements have been made in polycrystalline silicon films grown by the atmospheric pressure iodine vapor transport (APIVT) process. With optimized growth conditions, gas-phase nucleation that leads to spurious growth in the bulk and on the film surface can be eliminated. A smoother surface and nearly isotropic growth characteristics are also obtained, compared to films grown earlier. Hot-wire chemical...
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