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This article presents a millimeter wave bridge technique for nondestructive homogeneity characterization of dielectric LaAlO3 wafers. Millimeter waves in the wafer under test are excited locally and the transmitted wave amplitude and phase in different places of the samples are measured. The dependences of the phase shift on the dielectric constant of the wafers are calculated.
The WGM method was used in designed cryogenic dielectrometer for measurement of dielectric parameters of cryogenic liquids with small losses within the frequency range of 50-150 GHz and temperatures 0.8-300 K. The change of resonant characteristics of high-Q DDR, placed into He 4 at temperature lower the lambda-transition (a superfluid state) is detected
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