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We for the first time fabricated a GaInNAs DFB laser having a buried GaAs grating in the center current injection region. A successful DFB laser oscillation with the threshold current of 34 mA was obtained
GaInNAs lasers grown on GaAs substrates are very attractive for the application of uncooled operation with high performance at 1.3 mum region. However, fundamental material and device properties which are important for device design are still not fully understood. In this paper, we investigated temperature dependence of laser and light emitting diode (LED) characteristics for this purpose. We found...
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