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In this work, we have created a new type of structure, the nanopore active layer, for achieving quantization of carrier states in a semiconductor. The nanopore structure consists of a periodic two-dimensional array of localized energy barriers perturbing an otherwise conventional quantum well. This perturbation leads to the formation of intraband forbidden energy gaps which are observed experimentally.
An analytical model describing the density of states and gain spectrum of the ordered nanopore array diode laser is presented. The theoretically predicted gain spectrum shows excellent agreement with experimental results.
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