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Extra optical absorption in /spl mu/c-Si:H films at photon energy of 0.7/spl sim/1.2 eV caused by impurity has been studied by resonant photothermal bending spectroscopy. The extra absorption increases by thermal annealing in air. And, the absorption coefficient was not changed by carbon contamination in /spl mu/c-Si:H film. Thus, we propose that the origin of the extra absorption is localized states...
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