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High-performance 0.15 mu m gate length modulation-doped field-effect transistors (MODFETs) have been fabricated on a lattice-matched InAlAs/InGaAs heterostructure grown by organic vapour phase epitaxy (MOVPE). Excellent 'kink-free' DC characteristics with extrinsic transconductance g/sub m/ of 1080 mS/mm at a drain current of 508 mA/mm have been achieved. A unity current-gain cutoff frequency f/sub...
Reports the first demonstration of a lateral heterojunction bipolar transistor realised using selective area epitaxy to grow the emitter and collector structures. The transistor had a gain of 2 at a current density of 2 kA cm/sup -2/. The low current gain is directly attributable to the base width used in this novel structure and does not result from the regrown junctions which exhibited an ideality...
The high-speed operation of an optical tap on InP waveguides using an InGaAs p-i-n photodetector has been demonstrated. For a 300- mu m-long tap that samples 19% of the light propagating in a 7- mu m-wide waveguide, the response time is 50 ps with a 1-V reverse bias. This speed is limited by the RC time constant. The taps require a single epitaxial growth and can be readily integrated with directional...
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