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A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line...
Silicide-cap for Cu interconnects is promising for enhancing electromigration (EM) performance for 32 nm-node and beyond. But the trade-off properties of silicide-cap between line resistance and EM lifetime remain to be resolved. Increasing of line resistance is caused by Si diffusion in Cu line. So, we focused on Ti barrier metal (BM), which diffuses in Cu line, and applied it in combination with...
Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 mu m thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300 cm/sup 2//Vs with a carrier density of 2*10/sup 17/ cm/sup -3/ at room temperature. The MESFET (0.8 mu m...
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