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A trade-off property of CuSiN between EM improvement and line resistance increase was resolved by a breakthrough that leaves oxygen at grain boundary of Cu line surface before CuSiN formation. Then, the combination of CuSiN and Ti-rich TiN (Ti(N)) barrier metal (-BM) was applied. Oxygen left by weakening process strength of CuOx reduction lowered line resistance, because Si diffusion causing line...
We present a compact and efficient Monte Carlo method to reproduce a size effect on resistivity in sub-0.1 mum metallic interconnects. Implementation of our method is easy and our method is also not CPU-intensive thanks to its compactness and simplicity. In our method, the geometric effect of the size effect can be taken into account since surface scattering and grain boundary scattering, which are...
Silicide-cap for Cu interconnects is promising for enhancing electromigration (EM) performance for 32 nm-node and beyond. But the trade-off properties of silicide-cap between line resistance and EM lifetime remain to be resolved. Increasing of line resistance is caused by Si diffusion in Cu line. So, we focused on Ti barrier metal (BM), which diffuses in Cu line, and applied it in combination with...
We have succeeded in fabricating ultrafine carbon nanotube (CNT) via interconnects with SiOC interlayer dielectrics. High-quality multiwalled CNTs are grown in via holes with a diameter of 70 nm using pulse-excited remote plasma-enhanced chemical vapor deposition at 450degC. The resistance of a 70-nm-diameter CNT via is 52 Omega, which is the lowest ever reported for CNT via interconnects. The CNT...
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