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We provide a set of design considerations for In0.52Al0.48As based avalanche photodiodes (APDs) in an attempt to reduce the excess noise factor. We compared the effects of tapered electric fields to constant electric fields, in APDs with avalanche regions of 0.2 mum and 2.0 mum, on multiplication and excess noise factors using a Simple Monte Carlo model. We found that diodes having p+-n-n+ doping...
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