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We propose an integrated silicon photonic multispectral infrared platform for combining laser power spanning the ultraviolet to the mid-wave infrared from hybrid silicon III-V lasers by spectral beam combining with a novel ultra-broadband combiner.
Low-threshold lasing is achieved on compact hybrid silicon microring resonator devices (radii: 7.5, 12.5, 25 ??m) through both optical and electrical pumping. The limiting factor in scaling down for sub-mA operation is the thermal impedance.
The silicon evanescent device platform provides electrically pumped active device functionality on a low-loss silicon-on-insulator waveguide platform. We present here recent research in the area of single-wavelength silicon evanescent lasers that utilize distributed feedback, distributed Bragg reflector (DBR), and sampled grating (SG) DBR laser topographies.
We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively and shows open eye-diagrams under direct modulation at 2.5 Gb/s.
An electrically pumped 1310 nm silicon evanescent laser (SEL) is demonstrated utilizing the hybrid silicon evanescent waveguide platform. The SEL operates continuous wave (C.W.) up to 105degC with a threshold current of 30 mA and a maximum output power of 5.5 mW.
We analyze the dynamics of tunable-VCSOAs. At 6 mT the devices exhibit a Q of ~500 and an f0 of 168.32 kHz. At atmosphere Q is reduced to 1.2 resulting in <10 mus switching times
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