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We report a two-step growth of Al x Ga 1−x N (x∼0.2) by metal-organic vapor-phase epitaxy without a pretreatment of the substrate. High-quality, crack-free and near GaN-free AlGaN was achieved with a thickness much exceeding the theoretical critical thickness of the growth of AlGaN on GaN. The method was compared with the conventional ones such as AlGaN on AlN nucleation layer...
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