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Low-temperature polysilicon thin-film transistors (poly-Si TFTs) fabricated under 600 o C are treated with nitridation using NO plasma. Samples with nitrided gate oxide, nitrided active polysilicon, or both layers nitrided are produced respectively to compare their reliability. It is found that all the nitrided devices demonstrate improved reliability over the control one under both high-field...
Qualities of oxynitrides prepared by annealing O/sub 2/- and N/sub 2/O-grown oxides in NO ambient are investigated. Harder oxide/Si interface, less charge trapping and higher charge-to-breakdown characteristics are observed in NO-annealed N/sub 2/O-grown (N2ONO) oxynitride than NO-annealed O/sub 2/-grown (O2NO) oxynitride. The involved mechanism lies in higher interfacial nitrogen concentration and...
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