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The paper presents an overview of the Bias Temperature Instabilities (BTI) reliability in High-k/Metal gate technologies. We show that mobility performance and NBTI reliability are strongly correlated and that they are affected by the diffusion of nitrogen species N at the Si interface. PBTI, more sensitive to bulk oxide traps, is strongly reduced in very thin dielectric films. Reducing the metal...
A systematic study of mobility performances and BTI reliability was done in advanced dielectrics stacks. By reducing the oxide films thicknesses THKles2.5 nm, PBTI becomes generally very low and associated lifetimes are always over 10 years. By studying a large variety of dielectric stacks we also clearly demonstrate that mobility performances, interface defects Nit and NBTI reliability are strongly...
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