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A computationally efficient simulation model for the drain current characteristics of long-channel amorphous In-Ga-Zn-O (a-IGZO) thin-film transistors (TFTs) is developed. This model uses numerical solutions of the one-dimensional Poisson equation to significantly reduce the calculation time compared to a widely used two-dimensional approach. Moreover, for accurate simulation, the model takes into...
A new physics-based and computationally efficient drain current model for oxide semiconductor thin film transistors (TFTs) is developed. In this model, the influence of trap states in the band gap is taken into account to reproduce the gradual increase of the subthreshold current. Analytical expressions for the trapped electron densities are used to reduce the calculation time when solving the Poisson...
Performance of frequency mixing with a vacuum transistor, which is composed of a vacuum transistor with a field emitter array (FEA), a collector and a control grid, was evaluated. The parameters of the current-voltage characteristics necessary to derive the performance of frequency mixing were obtained.
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