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This paper gives a detailed analysis and discussion of the flow field inside the type of D125 MOCVD reactor chamber through the analysis of three-dimensional mathematical model and calculation. Under a wide range of geometric and process parameters, such as varying total flow rate of gas inlet, chamber pressure, growth temperature, and wafer carrier rotation. It is finally obtained the favorable conditions...
The doping characteristics of P-GaP layer in AlGaInP red LED has been studied, by changing the low pressure metal organic chemical vapor deposition (LP-MOCVD) system's growth temperature. Several epitaxial samples, which grown at different temperatures of LP-MOCVD, have been tested by ECV system. The results have been shown,that the doping density and the surface of GaP layer and the characteristics...
A systematic computational fluid dynamic (CFD) study was performed to investigate the effects of operating parameters of chamber pressure and wafer carrier rotation rate on the GaAs/AlGaAs deposition rate and uniformity in vertical rotating disc metal organic chemical vapor deposition (MOCVD) reactors. It is shown that significant improvement of the reactors efficiency can be achieved by finding the...
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