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Ultraviolet and X-ray photoelectron spectroscopies, Auger electron spectroscopy and low energy electron diffraction were used in order to investigate the electronic properties and the growth mode of very thin films of tellurium with mean thickness between 0.5 and 1000 Å deposited at room temperature on a Si(100)2 × 1 surface. The adsorbate-substrate interaction is found to be weak. In the initial...
Ultraviolet and X-ray photoelectron spectroscopies, Auger electron spectroscopy and low energy electron diffraction were used in order to investigate the electronic properties and the growth mode of very thin films of tellurium with mean thickness between 0.5 and 1000 Å deposited at room temperature on a Si(100)2 × 1 surface. The adsorbate-substrate interaction is found to be weak. In the initial...
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