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Open gate field effect transistors based on AlGaN/GaN heterostructures - where a two dimensional electron gas lies close to the surface - have been used in a wide variety of sensors. In this work we report on the characterization of a pH sensor. We determine its surface potential sensitivity and sensitivity in muA/pH, in good agreement with theory. We obtain a sensor resolution below 0.01 pH, and...
We characterize the third order nonlinear optical response of the interband transition of bulk InN and the intraband transition of GaN/AIN quantum dots, both of them in the spectral region around 1.5 mufrac14m. The results show that these materials can be very suitable for optical signal processing applications in the spectral region of wavelength-division multiplexed (WDM) transmission. Considering...
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