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Transient capacitance measurement is used to study the trap behaviors in AlGaN/GaN MIS-HEMTs: 1) By measuring transfer characteristics before and after the pulse cycles applied on the gate electrode in AlGaN/GaN MIS-HEMTs, the threshold voltage (Vth) instability induced by the gate pulse is investigated; 2) The change of trap density before and after step-stress applied on drain electrode is also...
A novel reverse conducting insulated-gate bipolar transistor (RC-IGBT) is proposed and investigated by numerical simulations. This new device features an oxide trench inserted between the N-collector and the P-collector. The oxide trench increases the collector short resistance by cutting off the low resistance electron path which is formed by the N-buffer layer. The snapback effect is therefore suppressed...
A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring an oxide trench placed between the n-collector and the p-collector and a floating p-region (p-float) sandwiched between the n-drift and n-collector is proposed. First, the new structure introduces a high-resistance collector short resistor at low current density, which leads to the suppression of the snapback effect....
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