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The pass-transistor structure provides a powerful tool for the implementation of binary and multiple-valued logic (MVL). Circuit realisation of any general MVL function using literals, MAX and MIN is easy. However, the resulting circuits have certain limitations. A combination of pass transistors (PT) with switched-capacitor (SC) circuits is shown to provide useful improvements.<<ETX>>
A new substrate fed logic structure is presented which makes use of V-groove silicon etching. Experimental results are presented for the devices. A speed-power product below 1 pJ was obtained despite the large area of the test structures and the use of conventional bipolar processing. Further improvement in performance is expected by optimising the process parameters.
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