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Sputter deposited Ta and TaN single layers of 10 nm thickness as well as graded TaN/Ta and Ta/TaN/Ta layer stacks that act as diffusion barriers for Cu metallization were investigated after annealing at temperatures between T an =300 and 700 o C. By means of glancing angle X-ray diffraction, glow discharge optical emission spectroscopy and transmission electron microscopy, results...
Structural properties of thin Ta and Ta-N films acting as diffusion barriers were investigated. Blanket Ta-based films of 10 nm thickness were deposited by conventional sputtering techniques onto (100)-Si and covered with a Cu cap layer. X-ray diffraction, depth profile analysis and electron microscopy were used to correlate results of microstructure and phase characterization with diffusion phenomena...
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