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Over-voltage RF stress was applied to an LC dual-resonance injection-locked frequency divider (ILFD) to study the post-stress ILFD RF performance. The LC ILFD was implemented in the TSMC 0.18 μm 1P6M CMOS process and it was stressed at the supply voltage of 2.3 V for 5 h. The dual-resonance ILFD has dual-band locking ranges and it uses series-peaking injection MOSFET. The over-voltage RF stress reduces...
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