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High-voltage 4H-SiC lateral p-n diodes based on the superjunction principle are fabricated on a semiinsulating substrate for the first time. Experimental results reveal that the length of the field plates on the cathode side and the location of the anode contact are crucial in obtaining a high breakdown voltage. The BV2/Ron of these devices is 19 MW/cm2. The best achieved blocking voltage is 3130...
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