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We examine the nature of the interface states induced during the integration of ferroelectric hafnium zirconium oxide on silicon. Metal-ferroelectric-insulator-silicon capacitors, with a thin layer of hafnium zirconium oxide grown by atomic layer deposition as the ferroelectric and various interfacial oxide layers as the insulator, are investigated. Since a high-temperature post-annealing is necessary...
This paper presents a study on the radiation-induced trapped charges and the pixel parameter degradation of a 4T CMOS image sensor through the pixel bias voltage technique and trap-annealing. The bias voltage during the radiation has an effect on the yield of oxide trapped charges. The post-radiation shallow trapped charges can be quickly annealed at room temperature. The pixel dark random noise is...
PbZr0.5Ti0.5O3 thin films have been prepared on Pt (111)/Ti/SiO2/Si substrates by a modified sol–gel technique. The PZT films were annealed layer by layer using a rapid thermal annealing (RTA) method during the spin-coating process. A novel route was used to obtain PZT films with different single-annealed-layer in thickness from the same precursor solution. It is found that the degree of (111) orientation...
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