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We examine the nature of the interface states induced during the integration of ferroelectric hafnium zirconium oxide on silicon. Metal-ferroelectric-insulator-silicon capacitors, with a thin layer of hafnium zirconium oxide grown by atomic layer deposition as the ferroelectric and various interfacial oxide layers as the insulator, are investigated. Since a high-temperature post-annealing is necessary...
We show that boron-diffused emitters can be passivated with AlOx deposited using RF sputtering of an Al target. The surface passivation achieved so far is inferior to that obtained using an optimised PECDV SiN process that includes a chemically grown SiO2 interfacial layer. Nevertheless, the levels of passivation obtained, expressed by emitter recombination current densities of JoE=228-349 fA/cm2...
We have extended the development of a recent interstitial iron imaging technique based on photoluminescence (PL) imaging and iron-boron pair dissociation. The method is best applied below the lifetime crossover point, in order to avoid FeB pair breaking during the PL measurements. We have applied this high resolution iron imaging technique to a range of multicrystalline silicon wafers from different...
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