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Mario Lanza and co‐workers fabricate resistive random access memories from chemical vapor deposited hexagonal boron nitride in article number 1604811. This two dimensional insulator can be coupled with metallic electrodes, and its conductivity can be tuned via electrical stresses. Penetration of boron ions drives the resistive switching, which is boosted by the generation of boron vacancies, especially...
The use of 2D materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academia and industry. However, while the research in 2D metallic and semiconducting materials is well established, detailed knowledge and applications of 2D insulators are still scarce. In this paper, the presence of resistive switching (RS) in multilayer...
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