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High-temperature stable micromachined piezoelectric energy harvesters consisting of elastically supported aluminum nitride (AlN)/silicon carbide (SiC) composite diaphragms have demonstrated operation at temperatures up to 320°C. In particular, the elastically supported diaphragm harvester is shown to offer higher compliance and better power conversion than a clamped device previously reported in [1],...
A new propagation layered media composed of a piezoelectric thin film and a substrate plate is studied in this work. The displacement profiles, phase velocities, and electromechanical coupling coefficients of Lamb wave modes are theoretically investigated for the c-axis oriented AlN films on cubic silicon carbide (3C-SiC) plates. Due to the different material properties of the AlN and 3C-SiC layers,...
The thermal compensation at high temperatures for aluminum nitride (AlN) Lamb wave resonators utilizing the lowest symmetric (S0) mode is theoretically and experimentally demonstrated in this work. The turnover temperature can be designed at high temperatures by changing the normalized AlN film thickness (hAlN/λ) and the normalized silicon oxide (SiO2) layer thickness (hSiO2/λ) in the AlN/SiO2 composite...
Highly c-axis oriented aluminum nitride (AlN) films were grown on epitaxial cubic silicon carbide (3C-SiC) layers on Si (100) substrates using alternating current (AC) reactive magnetron sputtering at temperatures between 300°C to 450°C. The AlN thin films were characterized by X-ray diffraction, scanning electron microscope, and transmission electron microscopy. Two-port surface acoustic wave (SAW)...
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