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Amorphous hydrogenated silicon nitride (a-SiNxHy) films were prepared by plasma-enhanced chemical vapor deposition (PECVD). The physical properties and chemical structures of the resulting materials were systematically investigated. Results reveal that the a-SiNxHy films similarly consist of four kinds of Si–N groups, including Si3N4, H–Si–N3, H2–Si–N2, and Si3–Si–N. Deposition at 13.56 MHz...
A series of Ni and Ge co-doped manganese nitride materials were fabricated by mechanical ball milling followed by solid-state sintering. Their thermal expansion properties and electrical and thermal conductivities were investigated in the temperature range of 77–300 K. The results show that Ni and Ge co-doped manganese nitride materials have negative thermal expansion (NTE), and the operation-temperature...
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