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Poly-Si TFTs with vacuum cavity next to the gate-oxide edge (quasi T-gate TFTs) have been fabricated with the wet-etching of gate-oxide and in-situ vacuum encapsulation techniques. The device characteristics of the quasi T-gate TFTs are examined and better than those of conventional TFTs, resulting from the vacuum cavity as the offset region to reduce the leakage current and as the field-induced drain...
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